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FLAM Electronics
| Model： | APT10035B2LLG |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Microsemi Corporation |
| Description： | MOSFET N-CH 100 |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | 1 |
|
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|
| TYPE | DESCRIPTION |
| Mfr | Microsemi Corporation |
| Series | POWER MOS 7® |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 14A, 10V |
| Power Dissipation (Max) | 690W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5185 pF @ 25 V |
